Product Summary

The CY62128ELL-45SXI is a high performance CMOS static RAM organized as 128K words by 8 bits. The CY62128ELL-45SXI features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE1 HIGH or CE2 LOW). The eight input and output pins (IO0 through IO7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or a write operation is in progress (CE1 LOW and CE2 HIGH and WE LOW).

Parametrics

CY62128ELL-45SXI absolute maximum ratings: (1)storage temperature: -65 to 150℃; (2)ambient temperature with power applied: -55 to 125℃; (3)supply voltage to ground potential: -0.5 to 6V; (4)DC voltage applied to outputs: -0.5 to 6V.

Features

CY62128ELL-45SXI features: (1)Very high speed: 45 ns; (2)Temperature ranges; (3)Voltage range: 4.5V–5.5V; (4)Pin compatible with CY62128B; (5)Ultra low standby power; (6)Ultra low active power; (7)Typical active current: 1.3 mA @ f = 1 MHz; (8)Easy memory expansion with CE1, CE2 and OE feat.

Diagrams

CY62128ELL-45SXI block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
CY62128ELL-45SXI
CY62128ELL-45SXI
Cypress Semiconductor
SRAM 1M MOBL ULTRA LO PWR HI SPD IND
Data Sheet
0-1: $2.12
1-25: $1.84
25-100: $1.73
100-250: $1.45
CY62128ELL-45SXIT
CY62128ELL-45SXIT
Cypress Semiconductor
SRAM 1M MOBL ULTRA LO PWR HI SPD IND
Data Sheet
0-1: $2.18
1-25: $1.89
25-100: $1.79
100-250: $1.49