(China (Mainland))
Product Summary
The FDC5612 is an N-channel power trench TM MOSFET. It has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Parametrics
FDC5612 absolute maximum ratings: (1)drain-source voltage: 60V; (2)Gate-source voltage: ±20V; (3)drain current-continuous: 4.3A; (4)drain current-pulsed: 20A; (5)power dissipation for single operation: 1.6W; (6)operating and storage junction temperature range: -55 to 150℃.
Features
FDC5612 features: (1)4.3 A, 60 V. RDS(ON) = 0.055 W @ VGS = 10 V, RDS(ON) = 0.064 W @ VGS = 6 V; (2)Low gate charge (12.5nC typical); (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDC5612 |
Fairchild Semiconductor |
MOSFET SSOT-6 N-CH 60V |
Data Sheet |
|
|
||||||||||||
|
FDC5612_F095 |
Fairchild Semiconductor |
MOSFET 60V 4.3A N-CH POWERTRENCH |
Data Sheet |
Negotiable |
|
||||||||||||
