Product Summary
The IRF2807PBF is a HEXFET power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRF2807PBF absolute maximum ratings: (1)continuous drain current: 82A; (2)continuous drain current @TC=100℃: 58A; (3)pulsed drain current: 280A; (4)power dissipation: 230W; (5)power dissipation: 1.5W/℃; (6)gate-to-source voltage: ±20V; (7)avalanche current: 43A; (8)repetitive avalanche energy: 23mJ; (9)operating junction and storage temperature range: -55 to 175℃.
Features
IRF2807PBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175°C Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF2807PBF |
International Rectifier |
MOSFET MOSFT 75V 82A 13mOhm 106.7nC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF200 |
Other |
Data Sheet |
Negotiable |
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IRF220 |
Other |
Data Sheet |
Negotiable |
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IRF2204 |
Other |
Data Sheet |
Negotiable |
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IRF2204LPBF |
International Rectifier |
MOSFET MOSFT 40V 170A 3.6mOhm 130nC |
Data Sheet |
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IRF2204PBF |
International Rectifier |
MOSFET MOSFT 40V 210A 3.6mOhm 130nC |
Data Sheet |
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IRF2204S |
Other |
Data Sheet |
Negotiable |
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