Product Summary

The IRF3710PBF is a power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF3710PBF absolute maximum ratings: (1)ID @ TC=25℃: 57A; (2)ID @ TC=100℃: 40A; (3)IDM: 180A; (4)PD: 200W; (5)VGS: ±20V; (6)IAR: 28A.

Features

IRF3710PBF features: (1)Dynamic dv/dt Rating; (2)175°C Operating Temperature; (3)Fast Switching; (4)Fully Avalanche Rated; (5)Lead-Free.

Diagrams

IRF3710PBF diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF3710PBF
IRF3710PBF

International Rectifier

MOSFET MOSFT 100V 57A 23mOhm 86.7nC

Data Sheet

0-1: $1.96
1-25: $1.27
25-100: $0.91
100-250: $0.86
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF3 10 10%TR
IRF3 10 10%TR

Vishay/Dale

Power Inductors 10uH 10%

Data Sheet

Negotiable 
IRF3 5.6 10%TR
IRF3 5.6 10%TR

Vishay/Dale

Power Inductors 5.6uH 10%

Data Sheet

0-1: $0.30
1-2000: $0.15
2000-4000: $0.14
4000-10000: $0.14
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IRF300

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Data Sheet

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IRF3000


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Data Sheet

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IRF3000PBF


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Data Sheet

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IRF3007

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Data Sheet

Negotiable