Product Summary
The IRF3710PBF is a power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRF3710PBF absolute maximum ratings: (1)ID @ TC=25℃: 57A; (2)ID @ TC=100℃: 40A; (3)IDM: 180A; (4)PD: 200W; (5)VGS: ±20V; (6)IAR: 28A.
Features
IRF3710PBF features: (1)Dynamic dv/dt Rating; (2)175°C Operating Temperature; (3)Fast Switching; (4)Fully Avalanche Rated; (5)Lead-Free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF3710PBF |
International Rectifier |
MOSFET MOSFT 100V 57A 23mOhm 86.7nC |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF3 10 10%TR |
Vishay/Dale |
Power Inductors 10uH 10% |
Data Sheet |
Negotiable |
|
|||||||||||||
IRF3 5.6 10%TR |
Vishay/Dale |
Power Inductors 5.6uH 10% |
Data Sheet |
|
|
|||||||||||||
IRF300 |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
IRF3000 |
MOSFET N-CH 300V 1.6A 8-SOIC |
Data Sheet |
Negotiable |
|
||||||||||||||
IRF3000PBF |
MOSFET N-CH 300V 1.6A 8-SOIC |
Data Sheet |
Negotiable |
|
||||||||||||||
IRF3007 |
Other |
Data Sheet |
Negotiable |
|