Product Summary

The IRF9530NPBF is an International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

Parametrics

IRF9530NPBF absolute maximum ratings: (1)ID @TC=25℃, continuous drain current: -14A; (2)ID @TC=100℃, continuous drain current: -10A; (3)IDM, pulsed drain current: -56A; (4)power dissipation: 79W; (5)linear derating factor: 0.53W/℃; (6)gate-to-source voltage: ±20V; (7)avalanche current: -8.4A.

Features

IRF9530NPBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175°C Operating Temperature; (4)Fast Switching; (5)P-Channel; (6)Fully Avalanche Rated.

Diagrams

IRF9530NPBF diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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IRF9530NPBF
IRF9530NPBF

International Rectifier

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Data Sheet

0-1: $1.38
1-25: $0.85
25-100: $0.58
100-250: $0.55
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Data Sheet

0-1: $1.37
1-25: $0.89
25-100: $0.64
100-250: $0.60