(China (Mainland))
Product Summary
The IRFR5305TRPBF is a power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRFR5305TRPBF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Parametrics
IRFR5305TRPBF absolute maximum ratings: (1)continuous drain current: -31A; (2)continuous drain current: -22A; (3)pulsed drain current: -110A; (4)power dissipation: 110W; (5)linear derating factor: 0.71W/℃; (6)gate-to-source voltage: ±20V; (7)single pulse avalanche energy: 280mJ.
Features
IRFR5305TRPBF features: (1)Ultra Low On-Resistance; (2)Surface Mount; (3)Straight Lead; (4)Advanced Process Technology; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
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 IRFR5305TRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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