(China (Mainland))
Product Summary
The K4T1G164QQ-HCE6 is a samsung semiconductor. It is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write, latency=read latency, off-chip driver impedance adjustment and on die termination. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks.
Parametrics
K4T1G164QQ-HCE6 absolute maximum ratings: (1)VDD, voltage on VDD pin relative to VSS: -1 to 2.3V; (2)VDDQ, Voltage on VDDQ pin relative to VSS: -0.5 to 2.3V; (3)VDDL, voltage on VDDL pin relative to VSS: -0.5 to 2.3V; (4)storage temperature: -55 to 100℃.
Features
K4T1G164QQ-HCE6 features: (1)supply voltage: 1.9V; (2)Supply voltage for DLL: 1.9V; (3)supply voltage for output: 1.9V; (4)input reference voltage: 0.51VDDQ mV; (5)Termination voltage: VREF+0.04V.
Diagrams
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 K4T1G044QA |
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K4T1G044QM-ZCCC |
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K4T1G044QM-ZCD5 |
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