(China (Mainland))
Product Summary
The S29GL01GP11TFIR1 is a 3V-only page mode flash memory featuring 90nm mirrorbit process technology. It offers a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. The S29GL01GP11TFIR1 features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Parametrics
S29GL01GP11TFIR1 absolute maximum ratings: (1)storage temperature: -65 to 150℃; (2)ambient temperature with power applied: -65 to 125℃; (3)voltage with respect to ground: -0.5 to VCC+0.5V; (4)Output short circuit current: 200mA; (5)voltage with respect to ground, A9 and ACC: -0.5 to 12.5V.
Features
S29GL01GP11TFIR1 features: (1)Single 3V read/program/erase (2.7-3.6 V); (2)Enhanced VersatileI/O? control, All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC; (3)90 nm MirrorBit process technology; (4)8-word/16-byte page read buffer; (5)32-word/64-byte write buffer reduces overall programming time for multiple-word updates; (6)Secured Silicon Sector region: 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number; Can be programmed and locked at the factory or by the customer; (7)Uniform 64Kword/128KByte Sector Architecture.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 S29GL01GP11TFIR10 |
Spansion |
Flash 3V 1 Gb Mirrorbit highest address110ns |
Data Sheet |
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S29GL01GP11TFIR13 |
Spansion |
Flash IC 1GIG 3.0V FLASH MEMORY |
Data Sheet |
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