(China (Mainland))
Product Summary
The TIC106D is a silicon controlled rectifier.
Parametrics
TIC106D absolute maximum ratings: (1)Continuous on-state current at (or below) 80℃ case temperature: 5 A; (2)Average on-state current (180° conduction angle) at (or below) 80℃ case temperature: 3.2 A; (3)Surge on-state current: 30 A; (4)Peak positive gate current: 0.2 A; (5)Peak gate power dissipation: 1.3 W; (6)Average gate power dissipation: 0.3 W; (7)Operating case temperature range: -40 to +110℃; (8)Storage temperature range: -40 to +125℃; (9)Lead temperature 1.6 mm from case for 10 seconds: 230℃.
Features
TIC106D features: (1)5 A Continuous On-State Current; (2)30 A Surge-Current; (3)Glass Passivated Wafer; (4)400 V to 800 V Off-State Voltage; (5)Max IGT of 200 uA.
Diagrams
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 TIC106D |
Other |
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Data Sheet |
Negotiable |
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TIC106D-S |
Bourns |
SCRs 400V 5A SCR |
Data Sheet |
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